Posters must be no larger than A0 in size (118.9 x 84.1cm / 46.8 x 33.1 inches), in a portrait format. The size of the poster boards are 6ft (1830mm) tall by 3ft (940mm), If your poster does not fit within these dimensions, we cannot guarantee it will be displayed.

Poster session 2 - Tuesday 31 March

 
P.2.1  

Homogeneity and composition of MOVPE-grown AlInGaN: A multiprobe nanostructure study 
Florian F. Krause, Institut für Festkörperphysik, Universität Bremen, Germany

P.2.2  

3D investigation of gallium containing structures within silicon
Katharina Gries, Philipps-Universität Marburg, Germany

P.2.3  

InGaN/GaN multiple quantum wells grown on m-plane bulk GaN
Fengzai Tang, University of Cambridge, UK

P.2.4  

Electron energy-loss spectroscopy and energy dispersive X-ray spectroscopy studies of indium concentration in InGaN thin film structures   
Xiaoyi Wang, University of Sheffield, UK 

P.2.5  

STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector
Knut Müller-Caspary, Universität Bremen, Germany

P.2.6  

Artifacts due to accidental single electrons in atom counting - Two different techniques for atom counting from HAADF-STEM imaging
Marco Schowalter, University of Bremen, Germany

P.2.7  

Hydrogen etching of InGaN/GaN quantum wells and epilayers
An Bao, University of Cambridge, UK

P.2.8  

Non-polar (11-20) InGaN nanostructures grown by modified droplet epitaxy
Helen Springbett, University of Cambridge, UK

P.2.9  

Investigation of defect formation during thermal annealing of Ga(NAs) and Ga(NP) using aberration corrected STEM
Lennart Duschek, Philipps-Universität Marburg, Germany

P.2.10  

Compositional analaysis of non-polar (11-20) InGaN/GaN quantum well structures and the relation to the emission wavelength
James Griffiths, University of Cambridge, UK

P.2.11  

Atomic structure of the GaN on Ge(111) interface 
Siyuan Zhang, University of Cambridge, UK

P.2.12  

InN/GaN Superlattices – Resolving the Discrepancies between Theory and Experiment
Toni Markurt, Leibniz Institute for Crystal Growth, Germany

P.2.13  

Determination of ion beam induced artifacts in TEM sample preparation of strained semiconductor heterostructures by means of FIB target preparation 
Jürgen Münzner, Philipps-Universität Marburg, Germany

P.2.14  

Automated defect analysis with EBIC 
Matthew Hiscock, Oxford Instruments NanoAnalysis, UK

P.2.15  

Structural and chemical studies of the GaN(0001)/GaAs (111)B Interface
Suman-Lata Sahonta, University of Cambridge, UK

P.2.16  

Microstructural analysis of cubic InGaN/GaN multiple quantum well structures grown on large-area 3C-SiC/Si (001) 
Suman-Lata Sahonta, University of Cambridge, UK

P.2.17  

Strain accommodation and indium incorporation in InxGa1-xN epilayers grown by molecular beam epitaxy 
Calliope Bazioti, Aristotle University of Thessaloniki, Greece

P.2.18  

Microstructure of InxGa1-xN (x = 0.22 to 0.67) films grown by metal-modulated epitaxy 
Fernando Ponce, Arizona State University, USA 

P.2.19  

High quality FIB lamella preparation for wide area atomic resolution TEM investigations
Rainer Straubinger, Philipps-University Marburg, Germany

     
     
     
     
     
     
     
     
     

Online registration is now closed.

Key dates

  • Abstract submission deadline EXTENDED:
    15 January 2015
  • Early registration deadline:
    25 February 2015
  • Registration deadline:
    18 March 2015
  • Manuscripts submission deadline:
    28 March 2015

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