Posters must be no larger than A0 in size (118.9 x 84.1cm / 46.8 x 33.1 inches), in a portrait format. The size of the poster boards are 6ft (1830mm) tall by 3ft (940mm), If your poster does not fit within these dimensions, we cannot guarantee it will be displayed.

Poster session 1 - Monday 30 March


In situ UHVEM study of {113}-defect formation in Si nanowires
Hugo Bender, imec FPS MCA, Belguim 


Influence of post-growth thermal annealing on InGaAs/GaAs quantum dot structures monolithically grown on silicon
Wei Li, University of Sheffield, UK


Automated background subtraction for electron energy-loss spectroscopy and application to spectral imaging of semiconductor layers
Veerendra C Angadi, University of Sheffield, UK


Cross-sectional cathodoluminescence investigations of GaN epitaxial grown on Si-based substrates  
Lucas Piot, CEA - LETI, France 


Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)
Bernd Jenichen, PDI, Germany


A nanoscale cathodoluminescence study of nitride semiconductor nanowires
David Stowe, GATAN UK


Epitaxial growth of wurtzite silicon on diamond silicon
Hugo Bender, imec, FPS MCA, Belguim


CL investigation of ZnO nanorods grown by ultra-fast hydrothermal process
Bartlomiej Witkowski, Institute of Physics PAS, Poland


Quantitative characterization of composition and interface roughness of (GaIn)As quantum wells
Han Han, Philipps-Universität Marburg, Germany


Morphological and compositional STEM analysis of organic-inorganic hybrid peroskites
Florencia Wisnivesky Rocca Rivarola, University of Cambridge, UK


Construction and test of an annular aperture for novel Z-contrast imaging
Thorsten Mehrtens, University of Bremen, Germany


Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
Daniel Fernández, Universidad de Cádiz, Spain


Composition Analysis in SEM and STEM
Meiken Falke, Bruker Nano GmbH, Germany


Structural properties of Si Nanowires
Maria josè Lo Faro, IPCF CNR MESSINA, Italy


Strained heterostructures in III-Nitride nanowires
Theodoros Karakostas, Aristotle University of Thessaloniki, Greece


Alloying variations in self-assembled InAs/GaAs (211)B quantum dot heterostructures
Nikoletta Florini, Aristotle University of Thessaloniki, Greece


Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires
Philomela Komninou, Aristotle University of Thessaloniki, Greece


Local optical properties 
of GaN/AlxGa1-xN nanowires studied by cathodoluminescence
Anna Reszka, Institue of Physics PAS, Poland


Green luminescence band in ZnO microrods – a cathodoluminescence study
Agnieszka Pieniążek, Institute of Physics PAS, Poland


Polarity-driven compositional segregation in core-shell GaAsP nanowires
Ana M Sanchez, University of Warwick, UK


Approaches for quantifying X-ray spectra from thick semiconductor specimens in a transmission electron microscope
Thomas Walther, University of Sheffield, UK

Online registration is now closed.

Key dates

  • Abstract submission deadline EXTENDED:
    15 January 2015
  • Early registration deadline:
    25 February 2015
  • Registration deadline:
    18 March 2015
  • Manuscripts submission deadline:
    28 March 2015

Latest news

Sponsors confirmed