Please note that the programme is subject to change.

The event will start with registration for early arrivals on Sunday 28 March at 12:30 (location will be confirmed shortly). The main conferences sessions will start at 15:00 on Sunday and close at 15:30 on Thursday 2 April.

Sunday 29 March     Monday 30 March   Tuesday 31 March    Wednesday 1 April   Thursday 2 April

Poster Session 1   Poster Session 2  Poster Session 3

You can download a copy of the programme overview here.

Thursday 2 April

08:30 Registration - Buckingham House Foyer
08:45 Presentations set-up
Session 5a: Scanning probe and atom probe techniques


(Invited) Atomic scale analysis of semiconductor nanostructures and doping atoms by scanning tunnel microscopy and atom probe tomography
Professor Dr Paul Koenraad, Eindhoven University of Technology, The Netherlands


(Invited) Atom probe tomography of semiconducting materials: Technology and applications
Mr Peter H Clifton, CAMECA Instruments / Ametek Inc, USA


Correlative investigation of II-VI heterostructures by atom probe tomography and transmission electron microscopy
Bastien Bonef, CEA/INAC/SP2M/LEMMA, Grenoble, France


Atom probe analysis of sub-surface phosphorus implantation profiles in single crystal silicon
James Douglas, University of Oxford, UK

11:00 Refreshments - Buckingham House Foyer

Session 5b: Lattice defects in bulk materials


(Invited) Structural characterization of semipolar GaN grown on Si(001) 
Professor Lev Sorokin, Ioffe Physical technical Institute of the Russian Academy of Sciences, St Petersburg, Russia


Epitaxial growth of GaN on polycrystalline diamond substrates 
Richard Webster, University of Bristol, UK


STEM optical sectioning for imaging screw displacements in dislocation core structures   
Hao Yang, University of Oxford, UK


Lunch - Buckingham House Foyer

Session 5c: Device studies

(Invited) The microstructure characterization of nitride laser diodes
Professor Piotr Perlin, Institute of High Pressure Physics "Unipress", Warsaw, Poland 


3D imaging of Si FinFET devices by combined HAADF-STEM and EDS tomography          Olivier Richard, imec FPS MCA, Leuven, Belguim


Multi-microscopy analysis of inhomogeneous electroluminescence in InGaN/GaN quantum well LED structures
Christopher Ren, University of Cambridge, UK


Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates
Ute Zeimer, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany


- Buckingham House Foyer


End of conference