Please note that the programme is subject to change.

The event will start with registration for early arrivals on Sunday 28 March at 12:30 (location will be confirmed shortly). The main conferences sessions will start at 15:00 on Sunday and close at 15:30 on Thursday 2 April.

Sunday 29 March     Monday 30 March   Tuesday 31 March    Wednesday 1 April   Thursday 2 April

Poster Session 1   Poster Session 2  Poster Session 3

You can download a copy of the programme overview here.

Wednesday 1 April

08:30 Registration - Buckingham House Foyer
08:45 Presentations set-up
Session 4a: Nitride epitaxy l


(Invited) GaN heterostructures with diamond and graphene for high power applications
Professor Béla Pécz, Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungary


Transmission electron microscopy investigations of nucleation of AlN layers on sapphire substrates
Natalia Stolyarchuk, Leibniz-Institute for Crystal Growth, Germany


Multi-microscopy techniques for the investigation of fully coalesced boundaries in GaN
Thomas O'Hanlon, University of Cambridge, UK


GaN on SOI substrate: strain and defects
Nicolas Mante, CEA, France


V-pit to truncated pyramid transition in AlGaN-based heterostructures
Anna Mogilatenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany



11:00 Refreshments - Fountain Court Walkway

Session 4b: Nitride epitaxy ll


(Invited) Highly spatially resolved cathodoluminescene of lll-nitride based nanostructures directly performed in a scanning transmission electron microscope
Professor Dr Jürgen Christen, Otto-von-Guericke-University Magdeburg, Germany


Study of phases created due to thermal degradation of InGaN quantum wells
Julita Smalc-Koziorowska, Institute of High Pressure Physics, Poland


Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields
Knut Müller, Universität Bremen, Germany


Lunch, Exhibition, Poster session 3 and Refreshments - Fountain Court Walkway

15:30 Presentations set-up
Session 4c: Thin films, multilayers and monolayers


(Invited) Heterostructured nanostructures in compound semiconductors
Professor Philomela Komninou, Aristotle University of Thessaloniki, Greece


Investigation of antimonide-based materials grown on exactly oriented (001) silicon substrate
Andrea Ott, Philipps-Universität Marburg, Germany


Effect of Sb content in the ordering of (In0.5Ga0.5)P layers for tandem solar cells
Lluís López-Conesa, Laboratory of Electron Nanoscopies (LENS)-MIND/IN2UB, Spain


Ga(NAsP)-layers in Si-based laser structures investigated by HRSTEM
Tatjana Wegele, Philipps-Universität Marburg, Germany


Structure of Fe3Si/Al/Fe3Si metal thin film stacks on GaAs(001)
Bernd Jenichen, Paul-Drude Institute, Berlin, Germany


SnS2 – An emerging layered metal dichalcogenide semiconductor: Materials properties, device characteristics, and electron-induced structural transformation
Eli Sutter, Brookhaven National Laboratory, USA


Controlling defects in topological insulator dichalcogenide thin films
Nadezda Tarakina, Queen Mary, University of London, UK


Catalyst engineering for CVD of large single crystal hexagonal boron nitride monolayer domains
Sabina Caneva, University of Cambridge, UK


End of sessions




Conference dinner - Dome Dining Hall, Murray Edwards, Cambridge