Programme


Please note that the programme is subject to change.

The event will start with registration for early arrivals on Sunday 28 March at 12:30 (location will be confirmed shortly). The main conferences sessions will start at 15:00 on Sunday and close at 15:30 on Thursday 2 April.

Sunday 29 March     Monday 30 March   Tuesday 31 March    Wednesday 1 April   Thursday 2 April

Poster Session 1   Poster Session 2  Poster Session 3

You can download a copy of the programme overview here.


Wednesday 1 April

 
08:30 Registration - Buckingham House Foyer
   
08:45 Presentations set-up
   
Session 4a: Nitride epitaxy l

09:00

(Invited) GaN heterostructures with diamond and graphene for high power applications
Professor Béla Pécz, Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungary

09:45

Transmission electron microscopy investigations of nucleation of AlN layers on sapphire substrates
Natalia Stolyarchuk, Leibniz-Institute for Crystal Growth, Germany

10:00

Multi-microscopy techniques for the investigation of fully coalesced boundaries in GaN
Thomas O'Hanlon, University of Cambridge, UK

10:15

GaN on SOI substrate: strain and defects
Nicolas Mante, CEA, France

10:30

V-pit to truncated pyramid transition in AlGaN-based heterostructures
Anna Mogilatenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany

10:45

TBC

   
11:00 Refreshments - Fountain Court Walkway

Session 4b: Nitride epitaxy ll

11:30

(Invited) Highly spatially resolved cathodoluminescene of lll-nitride based nanostructures directly performed in a scanning transmission electron microscope
Professor Dr Jürgen Christen, Otto-von-Guericke-University Magdeburg, Germany

12:15

Study of phases created due to thermal degradation of InGaN quantum wells
Julita Smalc-Koziorowska, Institute of High Pressure Physics, Poland

12:30

Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields
Knut Müller, Universität Bremen, Germany

   
12:45

Lunch, Exhibition, Poster session 3 and Refreshments - Fountain Court Walkway

   
15:30 Presentations set-up
   
Session 4c: Thin films, multilayers and monolayers

15:45

(Invited) Heterostructured nanostructures in compound semiconductors
Professor Philomela Komninou, Aristotle University of Thessaloniki, Greece

16:30

Investigation of antimonide-based materials grown on exactly oriented (001) silicon substrate
Andrea Ott, Philipps-Universität Marburg, Germany

16:45

Effect of Sb content in the ordering of (In0.5Ga0.5)P layers for tandem solar cells
Lluís López-Conesa, Laboratory of Electron Nanoscopies (LENS)-MIND/IN2UB, Spain

17:00

Ga(NAsP)-layers in Si-based laser structures investigated by HRSTEM
Tatjana Wegele, Philipps-Universität Marburg, Germany

17:15

Structure of Fe3Si/Al/Fe3Si metal thin film stacks on GaAs(001)
Bernd Jenichen, Paul-Drude Institute, Berlin, Germany

17:30

SnS2 – An emerging layered metal dichalcogenide semiconductor: Materials properties, device characteristics, and electron-induced structural transformation
Eli Sutter, Brookhaven National Laboratory, USA

17:45

Controlling defects in topological insulator dichalcogenide thin films
Nadezda Tarakina, Queen Mary, University of London, UK

18:00

Catalyst engineering for CVD of large single crystal hexagonal boron nitride monolayer domains
Sabina Caneva, University of Cambridge, UK

18:15

End of sessions

 

 

19:00

Conference dinner - Dome Dining Hall, Murray Edwards, Cambridge


Online registration is now closed.

Key dates

  • Abstract submission deadline EXTENDED:
    15 January 2015
  • Early registration deadline:
    25 February 2015
  • Registration deadline:
    18 March 2015
  • Manuscripts submission deadline:
    28 March 2015

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