Please note that the programme is subject to change.

The event will start with registration for early arrivals on Sunday 28 March at 12:30 (location will be confirmed shortly). The main conferences sessions will start at 15:00 on Sunday and close at 15:30 on Thursday 2 April.

Sunday 29 March     Monday 30 March   Tuesday 31 March    Wednesday 1 April   Thursday 2 April

Poster Session 1   Poster Session 2  Poster Session 3

You can download a copy of the programme overview here.

Monday 30 March

08:00 Registration
08:30 Presentations set-up
Session 2a: Cathodoluminescence and electron energy-loss spectroscopy


(Invited) Nanowire-based structures for IR to UV emitters studied by cathodoluminescence
Professor Anders Gustafsson, Lund University, Sweden,


(Invited) Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications
Dr Francesca Peiró, University of Barcelona, Spain


Analyses of defects in strained quantum wells grown on semipolar GaN plane by means of cathodoluminescence
Lucja Marona, Institute of High Pressure Physics PAS, Poland

10:45 Spatially- and time-resolved cathodoluminescence studies of InGaN/GaN multi-quantum wells grown on m-plane ammono bulk GaN
Rachel Oliver, University of Cambridge, UK

11:00 Refreshment break - Buckingham House Foyer
Session 2b: Quantum dots and nanowires l


(Invited) Silicon Nanowires: Synthesis, optical properties and photonic applications
Dr Alessia Irrera, IPCF CNR, Messina, Italy 


Strain relaxation in InAs quantum dots and its suppression by indium flushing
Fernando Ponce, Arizona State University, USA


Structural characterization of Ga2O3/SnO2 complex nanostructures by advanced transmission electron microscopy
Bianchi Mendez, Universidad Complutense Madrid, Spain / University of Warwick UK


Lunch, Exhibition, Poster Session P1 and Refreshments - Fountain Court Walkway

15:30 Presentations set-up

Session 2c: Quantum dots and nanowires ll


(Invited) III-V nanowire-based heterostructures: surprises and challenges
Professor Anna Fontcuberta i Morral, EPFL Lausanne, Switzerland 


Building nanostructures in nanowires using sequential catalyst reactions
Stephan Hofmann, University of Cambridge, UK


Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy
David Cherns, University of Bristol, UK


Understanding the true shape of GaAs nanowires grown by MOCVD
Jennifer Wong-Leung, The Australian National University, Australia


Characterization of core-shell inversion domain boundaries in gallium nitride nanowires
Benedikt Haas, CEA / Univ. Grenoble Alpes, France


Twinning and polymorphism in GaAs nanowires: a study using scanning precession electron diffraction (SPED)
Duncan Johnstone, University of Cambridge, UK

17:45 Strain mapping accuracy improvement using Super-Resolution techniques
Guillermo Bárcena-González, University of Cádiz, Spain
18:00 Sessions ends

Exhibitors drink reception - Fountain Court Walkway


Dinner - For residential delegates and those who have pre-booked - Dome Dining Hall