Introduction to the speakers at this event.

Professor Philip E Baston, Rutgers University, New Jersey, USA,
Title of presentation: Time domain analysis of EELS in the STEM: Nanoscale response from phonons to core excitations

Philip E. Batson is a Research Professor at the Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, with appointments in Physics, and Materials Science, after retirement from the IBM Thomas J. Watson Research Center in 2009. His education was at Cornell University, receiving the Ph.D. in 1976. After post-doctoral work at the Cavendish Laboratory, he moved to IBM. During the 1980's he pioneered spatially resolved Electron Energy Loss Spectroscopy in the Scanning Transmission Electron Microscope, with studies of surface plasmon scattering in metal nanoparticle systems. Later, he explored local electronic structure in Si-Ge based materials, obtained from detailed shapes of the Si 2p core loss excitation. In 2002, he demonstrated for the first time sub-Angstrom spatial resolution using aberration correction electron optics, and is presently using this capability to investigate plasmonic derived forces in sub-nanometer sized metal particles. He is a Fellow of the American Physical Society and the Microscopy Society of America.

Dr Hugo Bender, IMEC, Leuven, Belguim,
Title of presentation: FIB analysis for advanced device technology

Hugo Bender is principal scientist in the Materials and Components Analysis (MCA) department at imec (Leuven, Belgium). He has over 30 years of experience in materials characterization for semiconductor applications, in particular with transmission electron microscopy, scanning electron microscopy, focused ion beam, Auger spectroscopy, spectroscopic ellipsometry, infrared spectroscopy, ... His current interests are focused on (scanning) transmission electron microscopy for 3D-strain analysis, electron tomography, and chemical analysis in device structures for future sub-7 nm technologies. Furthermore his works relates to application of dualbeam FIB/SEM for TEM sample preparation and for the analysis of 3D stacked devices.

Professor Dr Jüergen Christen, Otto-von-Guericke-University Magdeburg, Germany
Title of presentation: Highly spatially resolved cathodoluminescence of III‐Nitride based nanostructures directly performed in a Scanning Transmission Electron Microscope

Education and Training

Habilitation 1992: venia legendi at the Technische Universität Berlin,Germany
Dissertation 1988: Ph.D. in physics at the Technische Universität Berlin, Germany
Studies 1977 - 1983: Study of Physics (Diploma) at the RWTH Aachen, Germany

Research and Professional Experience
Full Professor Since 1993: Inst. of Experimental Physcis, OVG University Magdeburg, Germany
Senior Scientist 1988 - 1993: Institute of Solid State Physics, Technische Universität Berlin
Research fellow 1983 - 1988: Institute of Solid State Physics, Technische Universität Berlin
Visiting Professor 2001 - 2002: Dep. of Physics & Astronomy, Arizona State University,Tempe, USA
Visiting Sientist 1993: Inst. of Sientific & Industrial Research ISIR, Osaka University, Japan
Postdoc 1990 - 1991: Bell Communications Research BELLCORE, Red Bank, NJ, USA

Special Functions:
2008 – 2015 Member of the Review Board FK 307 “Condensed Matter Physics” of the German
Research Foundation DFG
2012 – 2015 Member of the Councel of the German Physical Society DPG
2009 – 2011 Chairman of the Division of Semiconductor Physics, German Physical Society DPG
2012 – 2016 Vice President of the Otto-von-Guericke-University Magdeburg
2012 – 2016 Senator of the Otto-von-Guericke-University Magdeburg
2008 – 2012 Dean of the Faculty of Natural Science, OvG University Magdeburg
2002 – 2008 Senator of the Otto-von-Guericke-University Magdeburg
1998 – 2002 Dean of the Faculty of Natural Science, OvG University Magdeburg

Publication record: More than 350 publications in peer reviewed journals, h-index = 41

Professor Anna Fontcuberta i Morral, EPFL Lausanne, Switzerland
Title of presentation: Nanowire-based III-V heterostructures

A. Fontcuberta i Morral is associate professor at the Institute of Materials of the Ecole Polytechnique Fédérale de Lausanne (Switzerland). Her current research interest is the synthesis and nanoscale characterization of semiconductor nanostructures such as nanowires.
A. Fontcuberta i Morral finished her studies in physics at the University of Barcelona in 1997. She obtained her masters in materials science from the University of Paris XI in 1998 and her PhD in materials science from Ecole Polytechnique (France) in 2001. In 2001 and 2002 she was a postdoctoral fellow at the group of Prof. Harry A. Atwater at the California Institute of Technology. After that she obtained a permanent research position at the French research council (CNRS) at Ecole Polytechnique (France). In 2004, she took a leave of absence to return to the California Institute of Tehcnology, where she co-founded the startup company Aonex Technologies Inc.. In 2005 she returned to Europe and started her own research group in the chair of Prof. G. Abstreiter of the Technical University of Munich (Germany) thanks to the Marie Curie Excellence Grant. She continued her research in EPFL, where she moved in 2008.


Professor Anders Gustafsson, Lund University, Switzerland,
Title of presentation: Nanowire-based structures for IR to UV emitters studied by cathodoluminescence

Anders Gustafsson is currently a professor in solid state physics, specialising in the studies of optical properties of semiconductor nanowires using cathodoluminescence. He received his PhD from Lund University in Sweden. He has spent most of his research career at Lund University, except from two years at EPFL in Switzerland.

Dr Alessia Irrera, IPCF CNR, Messina, Italy
Title of presentation: Silicon nanowires: Synthesis, structural properties and photonic applications

Alessia Irrera was born on July 10, 1974. She received her master degree in Engineering of Materials in 2000. She received her PhD in Materials Science in 2004 from the University of Catania. From December 2004 to 31 August she was a member of the research staff of the MATIS CNR INFM of Catania. From 2010 she is a member of the research staff of the IPCF CNR of Messina. Her main research interest is the synthesis and the characterization of Si nanostructures. Her efforts are focused on converting some of the techniques traditionally used for thin film deposition (chemical vapour deposition, sputtering, electron beam evaporation) to advanced tools for a highly controlled synthesis of a wide range of Si and Ge nanostructures (nanocrystals, amorphous nanoclusters, nanowires). Special attention is devoted to the control of the structural properties of the nanostructures, including size, shape, volume density, crystallinity, defect density and surface passivation. Another relevant part of her research is focused on the room temperature optical properties of Si nanoclusters and nanowires under electrical and optical pumping; special attention has been devoted to the mechanisms limiting the emission efficiency and to the perspectives of these materials as light emitters in microphotonics.

Professor Dr Paul M Koenraad, Eindhoven University of Technology, The Netherlands
Title of presentation: Every atom counts: characterization of semiconductor nanostructures at the atomic scale in 2D and 3D

Scientific career

1987 Masters Degree in Physics, University of Utrecht
1987-1990 PhD-student Department of Applied Physics, Eindhoven Univ. of Technology
1990 Senior Researcher IBM-Zurich Laboratories, Switzerland
1991-1995 KNAW-fellow, Eindhoven University of Technology
1995-1999 Assistant Professor, Eindhoven University of Technology
1999-2005 Associate Professor, Eindhoven University of Technology
2005 Recipient of a NWO VICI grant
2006-present Full Professor and group leader, Eindhoven University of Technology

Scientific interest
Paul Koenraad has more than 25 years' experience of research on III-V semiconductor heterostructures and is a leading expert on the application of scanning probe techniques in the study of nanostructures and impurities in semiconductors. His work is presently focused on the spintronic, electronic and photonic properties of individual self-assembled nanostructures and single impurities in a semiconductor material. In 2005 he was awarded the Dutch VICI grant (1.25 Meuro) that allowed him to study magnetic impurities and nanostructures in III/V semiconductor materials. He co-authored more than 200 ISI scientific papers and wrote several review papers and book chapters on his research activities. He is group leader of the research group "Photonics and Semiconductor Nanophysics" which employs over 50 academic researchers and technicians.

Key publications
- J. van Bree, Yu. Silov, P.M. Koenraad M.E. Flatté "Spin-orbit induced circulating currents in semiconductor nanostructures" PRL 112, 187201 (2014)
- P. M. Koenraad and M.E. Flatté "Single dopants in semiconductors" Nature Materials 10, 96 (2011)
- K. Teichmann, M. Wenderoth, S. Loth, J.K. Garleff, A.P. Wijnheijmer, P.M. Koenraad, and R.G. Ulbrich, "Bistable charge configuration of donor systems near the GaAs(110) surfaces" Nano Letters 11, 3538 (2011)
- N. A. J. M. Kleemans, J. van Bree, A. O. Govorov, J. G. Keizer, R. Nötzel, A. Yu. Silov and P. M. Koenraad "Many-body exciton states in self-assembled quantum dots coupled to a Fermi-sea" Nature Physics 6, 534 (2010)
- C. Celebi, J.K. Garleff, A.Yu. Silov, A.M. Yakunin, P.M. Koenraad, W. Van Roy, J.-M. Tang, and M.E. Flatté "Surface induced asymmetry of acceptor wave functions" PRL 104, 086404 (2010)

Professor Philomela Komninou, Aristotle University of Thessaloniki, Greece
Title of presentation: Heterostructured nanostructures in compound semiconductors

Philomela Komninou is a Professor of Physics in the Aristotle University of Thessaloniki. She is the Director of the "Electron Microscopy and Structural Characterization of Materials Laboratory" of the Department of Physics and the leader of the Nanostructured Materials Microscopy Group "nmmg" ( She has been working in Electron Microscopy of semiconducting materials for thirty years and published more than two hundred papers in peer-reviewed international journals. She has coordinated a series of research projects funded by National and EC resources and has expertise on the structural and electronic properties of compound semiconductors using analytical and quantitative HRTEM techniques combined with theoretical modeling.

Dr Ondrej L Krivanek, Nion Co. USA
Title of presentation: (S)TEM characterization of semiconductors - past, present and future

Ondrej L. Krivanek FRS is the President of Nion Co. and Adjunct Professor at Arizona State University. Ondrej is well known for pioneering new techniques of structure research and designing new instruments. Early on in his scientific career, he applied lattice resolution imaging to the Si-SiO2 interface in MOSFETS and to other important structures in semiconductors. He went on to design or co-design several leading instruments of electron microscopy, including parallel detection EELS, post column-imaging filter, electron microscopy software (Gatan DigitalMicrograph), and the first working aberration corrector for a scanning transmission electron microscope (STEM). In 1997 Ondrej and Niklas Dellby founded Nion Company, which introduced aberration-corrected STEMs that have established many important benchmarks: the first sub-Å electron probe, obtaining atomic-resolution EELS elemental maps efficiently, recording the first atomic-resolution images of graphene and monolayer BN, detecting EEL and X-ray spectra of single atoms, and bringing energy loss spectroscopy with sub-10 meV energy resolution to STEM. Ondrej's publications have been cited over 7000 times, and he is a Fellow of APS, IoP, MSA, RMS and the Royal Society.

Dr David J Larson, CAMECA Instruments / Ametek Inc,
Title of presentation: Atom probe tomography: Technology and application to semiconducting materials

David J. Larson is the director of scientific marketing for CAMECA. He received his PhD degree from the University of Wisconsin. His honors include the Burton Metal (MSA), Honorary Staff (University of Sydney), the Cosslett Award (MAS), Visiting Scholar (Corpus Christi College, Oxford), and the Innovation in Materials Characterisation Award (MRS).

Professor Jannik C Meyer, University of Vienna, Austria
Title of presentation: Analysis and manipulation of radiation sensitive 2-D materials, and recent developments on the Vienna UltraSTEM

Jannik C. Meyer has studied physics and electrical engineering at the Rheinisch-Westfälische Technische Hochschule (RWTH) in Aachen, Germany, carried out his PhD work at the Max Planck Institute for solid state research in Stuttgart, and after post-doctoral periods at U.C. Berkeley, US and at the University of Ulm, Germany is currently Professor in the department of Physics at the University of Vienna, Austria. His research interests are novel low-dimensional materials, nanoscale devices and new methods for high spatial resolution characterization. He has published over 75 articles with together more than 9000 citations (


Professor Béla Pécz, Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungary
Title of presentation: GaN heterostructures with diamond and graphene for high power applications

Born: Celldömölk, Hungary, 1961.08.16.
Graduated as a physicist in 1985, PhD in 1993 and D.Sc in 2004

Research topics: Electron microscopy, Contacts to compound semiconductors, Growth mechanism of SiC and GaN layers, defect characterisation
Publications: 150 papers received 1350 independent citations

President of the Hungarian Society for Microscopy, Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, Pf. 49. Hungary
Phone: +36 1 3922587

Dr Francesca Peiró, University of Barcelona, Spain,
Title of presentation: Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications

Dra. Francesca Peiró, (Spain, 1965) is professor at the Electronics Department of the University of Barcelone. She is the leader of the Laboratory of Electron Nanoscopy (LENS: of the research group Micro-nanotechnologies and Nanoscopies for electronic and photonic devices (MIND). Her main field of research is transmission electron microscopy and related techniques applied to the characterisation of of III-V semiconductors and nanostructures, complex oxides for spintronics and nanomaterials for energy.

CONTACT: LENS - Laboratory of Electron Nanoscopy, MIND - Micro-Nanotechnology and Nanoscopies for electrophotonic Devices, IN2UB - Institute of Nanoscience and Nanotechnology, Electronics Department, University of Barcelona, c/ Marti Franqués 1, 08028 Barcelona,
Phone: (+34) 93 403 91 55

Professor Piotr Perlin, Institute of High Pressure Physics "Unipress", Poland,
Title of presentation: The microstructure characterization of nitride laser diodes.

Piotr Perlin is the professor of physics at the Institute of High Pressure Physics, Warsaw, Poland. He graduated from the Department of Physics, University of Warsaw in 1984. He receives his PhD degree from Institute of Physics, Polish Academy of Sciences. Between 1995 and 1997, senior research engineer at the University of New Mexico USA, doing pioneering work on the reliability of nitride light emitters. During the years 1997-1998, employed by University of Calfornia at Berkeley. Since 1999 he is associate and full professor at the Institute of High Pressure Physics in Warsaw, leading the nitride laser diode group.

Professor Lev Sorokin, Ioffe Physical technical Institute of the Russian Academy of Sciences, Russia
Title of presentation: Structural characterization of semipolar GaN grown on Si(001)

I was born in 1937 on May 16, graduated the state university in 1959 (Sverdlovsk, now Ekaterinburg, Ural) in 1960 moved to Leningrad (now Saint-Petersburg). My first thesis is " TEM and X-Ray study of dispersed hardening Cu-Be and Al-Ge Alloys", maintained it in 1968. Second thesis titled "Defect structure of ageing semiconducting solid solutions. Investigations by TEM and X-Ray" was maintained in 1985. Several times, starting from 1972, was visiting the Electron Microscopic Centre (Halle, Germany) for scientific work using High voltage Electron Microscope (1Mev). According to the Exchange Program between the Royal Society and the Russian Academy of Sciences have visited Department of Materials (Oxford University, 1993, 1995, 2001) for joint work with Prof. John Hutchison.
The field of my study: defects formation in bulk semiconducting materials, hetero- and nanostructures on the basis of semiconductors; current interest in Growth of III-Nitrides.
As professor I give the lectures to students in Saint-Petersburg state technical university.
My current position - the head of laboratory in Ioffe Physical technical Institute of the Russian Academy of Sciences, where I am working from 1962.
My hobby - solo singing.